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This letter presents a high conversion gain double-balanced active frequency doubler operating from 36 to 80 GHz. The circuit was fabricated in a 200 GHz fT and fmax 0.18 ??m SiGe BiCMOS process. The frequency doubler achieves a peak conversion gain of 10.2 dB at 66 GHz. The maximum output power is 1.7 dBm at 66 GHz and -3.9 dBm at 80 GHz. The maximum fundamental suppression of 36 dB is observed at 60 GHz and is better than 20 dB from 36 to 80 GHz. The frequency doubler draws 41.6 mA from a nominal 3.3 V supply. The chip area of the active frequency doubler is 640 ??m ?? 424 ??m (0.272 mm 2) including the pads. To the best of authors' knowledge, this active frequency doubler has demonstrated the highest operating frequency with highest conversion gain and output power among all other silicon-based active frequency doublers reported to date.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:19
,
Issue:
9
)
Date of Publication: Sept. 2009
- Page(s):
- 572 - 574
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 10847244
- Digital Object Identifier :
- 10.1109/LMWC.2009.2027084
- Product Type:
- Journals & Magazines
- Date of Publication :
- 11 August 2009
- Date of Current Version :
- 28 August 2009
- Issue Date :
- Sept. 2009
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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