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Temperature Effect on Ku -Band Current-Reused Common-Gate LNA in 0.13- \mu{\hbox {m}} CMOS Technology

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5 Author(s)
Wen-Lin Chen ; Dept. of Electr. Eng., Nat. Chung Cheng Univ., Chiayi, Taiwan ; Sheng-Fuh Chang ; Kun-Ming Chen ; Guo-Wei Huang
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This paper presents the temperature effect on a Ku-band NMOS common-gate low-noise amplifier (CG-LNA). The temperature characteristics of an NMOS transistor and spiral inductors are obtained over the temperature range from 253 to 393 K. These results show that the optimal bias condition minimizes the transconductance and drain current temperature variations. Based on these results, a current-reused CG-LNA with good temperature performance is designed. At ambient temperatures, the CG-LNA has a measured power gain of 10.3 dB and a noise figure (NF) of 4.3 dB at 15.2 GHz, while consuming 4.5 mA from a 1.3-V power supply. When the temperature varies from 253 to 393 K, the CG-LNA has a power gain variation of 3 dB, NF variation of 2 dB , and dc power consumption variation of 11.9%. This paper is the first to report the temperature effect on Ku-band CG-LNAs.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:57 ,  Issue: 9 )