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Traveling-Wave Amplifiers in Transferred Substrate InP-HBT Technology

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5 Author(s)
Kraemer, T. ; Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany ; Meliani, C. ; Schmueckle, F.J. ; Wuerfl, J.
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Promising transistor results of an InP transferred substrate (TS) technology are presented. ft and fmax are reported as high as 420 and 450 GHz, respectively. Processing has been developed to a full monolithic microwave integrated circuit compatible technology with metal-insulator-metal capacitors, NiCr resistors, and a multilevel wiring scheme. As an example, traveling-wave amplifiers (TWAs) have been designed and realized in a microstrip environment. Simulations of the environment have been done, and are presented in this paper. They have then been used as a design kit to perform circuit simulations. The TWAs demonstrate a gain of 12.8 dB and a 3-dB cutoff frequency fc of 70 GHz. To the authors' knowledge, this is the highest proven bandwidth of a broadband amplifier in TS technology.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:57 ,  Issue: 9 )