Referenced Items are not available for this document.
We present an AlGaN/GaN high-electron mobility transistor (HEMT) with an integrated recessed protection diode on the drain side of the transistor channel. Results from our Schottky-drain HEMT demonstrate an excellent reverse blocking with minor tradeoff in the on-state resistance for the complete device. The excellent quality of the forward diode characteristics indicates high robustness of the recess process. The reverse blocking capability of the diode is better than - 110 V. Physical-based device simulations give an insight in the respective electronic mechanisms. This is the first time that a recessed Schottky-drain diode integrated in a HEMT device is presented.
Published in:
Electron Device Letters, IEEE
(Volume:30
,
Issue:
9
)
Date of Publication: Sept. 2009
- Page(s):
- 901 - 903
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10841642
- Digital Object Identifier :
- 10.1109/LED.2009.2026437
- Product Type:
- Journals & Magazines
- Date of Publication :
- 11 August 2009
- Date of Current Version :
- 25 August 2009
- Issue Date :
- Sept. 2009
- Sponsored by :
- IEEE Electron Devices Society
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