Spectral response modelling of a-Si:H solar cells using accurate light absorption profiles

An optical model calculating the generated carrier profile in a-Si:H solar cells deposited on hazy and nonhazy transparent conducting oxide (TCO) has been integrated into a numerical transport and recombination program. A comparison of simulated and measured reflectances of pin structures opens up a possibility to check the prepared layer thicknesses and the optical device properties. Furthermore, the examination of the current gain employing a ZnO/metal back contact reveals the importance of using accurate light absorption profiles for spectral response modelling and device characterisation of pin solar cells.