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Spectral response modelling of a-Si:H solar cells using accurate light absorption profiles

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8 Author(s)
H. Stiebig ; Inst. fur Schicht- und Ionentechnik, Forschungszentrum Julich GmbH, Germany ; A. Kreisel ; K. Winz ; N. Schultz
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An optical model calculating the generated carrier profile in a-Si:H solar cells deposited on hazy and nonhazy transparent conducting oxide (TCO) has been integrated into a numerical transport and recombination program. A comparison of simulated and measured reflectances of pin structures opens up a possibility to check the prepared layer thicknesses and the optical device properties. Furthermore, the examination of the current gain employing a ZnO/metal back contact reveals the importance of using accurate light absorption profiles for spectral response modelling and device characterisation of pin solar cells

Published in:

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on  (Volume:1 )

Date of Conference:

5-9 Dec 1994