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Growth of epitaxial CdTe/CdS heterostructures for single crystal thin film solar cell applications

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4 Author(s)
Kessler, K. ; AFIF, Swiss Federal Inst. of Technol., Zurich, Switzerland ; Tiwari, A.N. ; Blunier, S. ; Zogg, H.

Epitaxial CdTe/CdS heterostructures have been grown by molecular beam epitaxy onto BaF2 covered Si (111) substrates. An epitaxial BaF2 buffer is used for compatibility reasons, and because of easier dissolution during the lift-off processing. Epitaxy of cubic CdS (111) layers on BaF2/Si (111) is achieved; electron channelling patterns exhibit a three-fold symmetry which is a characteristic for cubic crystal structures. The growth kinetics and structural properties of epitaxial CdS and CdTe/CdS have been studied with reflection high energy electron diffraction, Rutherford backscattering spectrometry and X-ray diffraction rocking curve measurements. The full width at half maximum of the (222) CdS and (333) CdTe X-ray peaks are ~1150 arcsec for 2.7 and 3.4 μm thick CdS and CdTe layers, respectively. To fabricate CdTe/CdS single crystal thin film solar cells, a lift-off process has been developed to remove the epitaxial layers from the Si substrates

Published in:

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on  (Volume:1 )

Date of Conference:

5-9 Dec 1994