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Comparative Study of Self-Sputtering Effects of Different Boron-Based Low-Energy Doping Techniques

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5 Author(s)
Shu Qin ; Micron Technol., Inc., Boise, ID, USA ; Kent Zhuang ; Shifeng Lu ; Yongjun Jeff Hu
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Angle-resolved X-ray photoelectron spectroscopy method was used to study self-sputtering effects of different p-type (boron-based) low-energy doping techniques, including conventional monoatomic 11B beam-line ion implant, molecular beam-line ion implants, cluster B beam-line ion implant, and plasma doping (PLAD). It has been found that the self-sputtering effects of the beam-line implants correlate with the mass of ion species except for BF2 implant. Cluster B implant shows severe self-sputtering effect and surface roughness due to its very heavy and very large cluster ions. BF2 implant shows severe sputtering/etching effect but comparable roughness due to a combination of the physical sputtering and reactive ion etching. PLAD processes using B2H6 and BF3 gas species have no sputtering effects but have deposition under certain process conditions.

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IEEE Transactions on Plasma Science  (Volume:37 ,  Issue: 9 )