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B/P doping in application of silicon oxynitride based integrated optics

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5 Author(s)
F. Sun ; University of Twente, Postbus 217, 7500AE Enschede, The Netherlands ; M. G. Hussein ; K. Worhoff ; G. Sengo
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In this paper, gaseous precursors containing boron or phosphorous were intentionally introduced in the deposition of SiON layers and upper SiO2 claddings. The measurements show that the as-deposited B/P-doped SiON layers contain less hydrogen than undoped layers. Furthermore, the necessary annealing temperature for elimination of hydrogen related absorption (propagation loss) is greatly reduced in B/P-doped layers.

Published in:

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Date of Conference:

14-19 June 2009