By Topic

Low Vπ high-speed GaAs travelling-wave electrooptic phase modulators using an n-i-p-n structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Qiaoyin Lu ; Semicond. Photonics Group, Trinity Coll. Dublin, Dublin, Ireland ; Weihua Guo ; Byrne, D. ; Donegan, J.F.

In this paper, we report a new design for GaAs modulators based on an n-i-p-n structure. The travelling-wave coplanar waveguide (CPW) electrodes are employed to realize high speed operation. By optimization, an electrical 3-dB bandwidth of nearly 40 GHz (optical 3-dB bandwidth of 80GHz) and a Vpi around 6.6 V are predicted for a 5 mm long phase modulator.

Published in:

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Date of Conference:

14-19 June 2009