Measurements of electron temperatures (Te) and electron energy distribution functions (EEDFs) in a dual frequency capacitively coupled etcher were performed by using trace rare gas optical emission spectroscopy (TRG-OES). The parallel plate etcher was powered by a high frequency (60 MHz) “source” top electrode and a low frequency (13.56 MHz) “substrate” bottom electrode. Te first increased with pressure up to ∼20 mTorr and then decreased at higher pressures. Increasing the bottom rf power resulted in higher electron temperatures. Electron temperatures in 90% CF4+10% O2 plasmas were similar to those in 80% CF4+20% O2 plasmas. EEDF exhibited bi-Maxwellian characteristics with enhanced high energy tail, especially at pressures ≫20 mTorr.