High-power high-temperature operation of 0.98-/spl mu/m S-SQW lasers with InGaAsP (Eg: 1.61 eV) barriers

In this paper, we systematically investigate the advantage of InGaAsP (Eg: 1.61 eV) barriers, which have the bandgap difference of 345 meV, against temperature characteristics, and compare them with conventional GaAs barriers. The excellent temperature characteristics of the laser with InGaAsP barriers results in high power operation at high temperatures.