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High-power high-temperature operation of 0.98-μm S-SQW lasers with InGaAsP (Eg: 1.61 eV) barriers

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5 Author(s)
Sagawa, M. ; Central Res. Lab., Hitachi Ltd., Kokubunji, Japan ; Toyonaka, T. ; Hiramoto, K. ; Shinoda, K.
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In this paper, we systematically investigate the advantage of InGaAsP (Eg: 1.61 eV) barriers, which have the bandgap difference of 345 meV, against temperature characteristics, and compare them with conventional GaAs barriers. The excellent temperature characteristics of the laser with InGaAsP barriers results in high power operation at high temperatures

Published in:

Semiconductor Laser Conference, 1994., 14th IEEE International

Date of Conference:

19-23 Sep 1994