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The field emission properties of diamond films on TiSi2/Si

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2 Author(s)
Changzhi Gu ; National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China ; Wei Liu

In this work, diamond films were grown on TiSi2 surface coated on Si substrate using hot-filament CVD method. It is demonstrated that at the same condition, (001) textured diamond nuclei can be formed on Si and TiSi2 surface, however, when diamond films was grown on Si substrate, the (100) facet has a high growth rate, while as for the case of TiSi2 substrate, the (111) facet of diamond grows faster than the (100) facet, so that the (111) facet of diamond will spread and (100) surfaces will decline. Field electron-emission experiment shows that the diamond films grown on TiSi2 own preferable emission character than that grown on Si.

Published in:

Vacuum Electronics Conference, 2009. IVEC '09. IEEE International

Date of Conference:

28-30 April 2009