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High-temperature modulation dynamics of 1.3 μm AlxGa yIn1-x-yAs/InP compressive-strained multiple-quantum-well lasers

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9 Author(s)
Zah, C.E. ; Bellcore, Red Bank, NJ, USA ; Wang, M.C. ; Bhat, R. ; Lee, T.P.
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Intrinsic small-signal modulation responses of 1.3 μm Alx GayIn1-x-yAs/InP compressive-strained multiple-quantum-well lasers with three different barrier layers are investigated. For the lasers with a barrier bandgap wavelength of 1.01 μm, k factors are determined to be 0.24-0.25 ns, and thermal-limited 3-dB bandwidths of 19.5, 15, and 13.9 GHz are measured at 25, 65 and 85°C, respectively

Published in:

Semiconductor Laser Conference, 1994., 14th IEEE International

Date of Conference:

19-23 Sep 1994