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Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes

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9 Author(s)
R. Hiroyama ; Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan ; Y. Bessho ; H. Kase ; T. Ikegami
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Summary form only given. Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes were investigated for the first time. The lowest threshold current of 33 mA and the highest maximum operating temperature of 90°C were achieved

Published in:

Semiconductor Laser Conference, 1994., 14th IEEE International

Date of Conference:

19-23 Sep 1994