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Low voltage carrier injection in ZnSe-based blue-green laser diodes on p-type GaAs substrates with InGaAlP band offset reduction layers

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8 Author(s)
Ishikawa, M. ; Mater. Devices Lab., Toshiba Corp., Kawasaki, Japan ; Nishikawa, Y. ; Saito, S. ; Onomura, M.
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Summary form only given. A low voltage current injection is demonstrated theoretically and experimentally for ZnSe/CdZnSe blue-green lasers. Insertion of InGaAlP layers reduce the excess voltage drop, due to the large valence band offset between the p-type GaAs substrate and p-type ZnSe layer. The InGaAlP layers are also useful as high concentration p-type ZnSe layers can be grown on them

Published in:

Semiconductor Laser Conference, 1994., 14th IEEE International

Date of Conference:

19-23 Sep 1994