Referenced Items are not available for this document.
Summary form only given. A low voltage current injection is demonstrated theoretically and experimentally for ZnSe/CdZnSe blue-green lasers. Insertion of InGaAlP layers reduce the excess voltage drop, due to the large valence band offset between the p-type GaAs substrate and p-type ZnSe layer. The InGaAlP layers are also useful as high concentration p-type ZnSe layers can be grown on them
Published in:
Semiconductor Laser Conference, 1994., 14th IEEE International
Date of Conference: 19-23 Sep 1994
- Page(s):
- 199 - 200
- Meeting Date :
- 19 Sep 1994-23 Sep 1994
- Print ISBN:
- 0-7803-1754-8
- INSPEC Accession Number:
- 5105295
- Conference Location :
- Maui, HI
- Digital Object Identifier :
- 10.1109/ISLC.1994.519333
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
