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High-power single-transverse-mode operation of narrow-ridge-waveguide 0.98-μm InGaAs/AlGaAs strained-quantum-well lasers by in situ monitored RIBE

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5 Author(s)
Chida, H. ; Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan ; Hamamoto, K. ; Fukagai, K. ; Miyazaki, T.
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Narrow ridge waveguide 0.98-μm InGaAs/AlGaAs quantum-well laser diodes (LDs) fabricated by in situ monitored reactive ion beam etching operated in the fundamental lateral-mode up to 254 mW, and fiber-coupled power was as much as 150 mW

Published in:

Semiconductor Laser Conference, 1994., 14th IEEE International

Date of Conference:

19-23 Sep 1994