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Peculiarities of operation characteristics of high-power InGaAsP/GaAs 0.8 μm laser diodes

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9 Author(s)
Razeghi, M. ; Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA ; Diaz, J. ; Eliashevich, I. ; He, X.
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The InGaAsP high power laser emitting at 808 nm with ηd =1.1 W/A, Jth=200 A/cm2, and To=155°C have been grown by LP-MOCVD. Far field divergence of 27°, output power of 3 W in the pulse-regime, 1.5 W in the quasi-CW-regime and 1 W in the CW-mode per uncoated facet have been obtained for 1 mm long diodes

Published in:

Semiconductor Laser Conference, 1994., 14th IEEE International

Date of Conference:

19-23 Sep 1994