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Low voltage performance of a low noise operational amplifier in a 1.2 μm digital CMOS technology

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2 Author(s)
Holman, W.T. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Connelly, J.Alvin

A low noise operational amplifier using lateral PNP bipolar transistors has been fabricated in a 1.2 μm digital CMOS process. Total circuit area is 0.211 mm2. The amplifier functions with power supply voltages of ±0.5 V, achieves a GBW product >400 kHz, requires a low quiescent current of 70 μA, and generates En =39 nV/√(Hz) at 10 Hz

Published in:
Circuits and Systems, 1994., Proceedings of the 37th Midwest Symposium on  (Volume:1 )

Date of Conference: 3-5 Aug 1994

Page(s):
111 - 114 vol.1
Meeting Date :
03 Aug 1994-05 Aug 1994
Print ISBN:
0-7803-2428-5
INSPEC Accession Number:
5124477
Conference Location :
Lafayette, LA
Digital Object Identifier :
10.1109/MWSCAS.1994.519202
Product Type:
Conference Publications

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