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High temperature and reliable operation of 630 nm-band InGaAlP tensile-strained multiquantum-well laser diodes

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4 Author(s)
Watanabe, M. ; Semicond. Group, Toshiba Corp., Kawasaki, Japan ; Matsuura, Hatsumi ; Shimada, Naohiro ; Okuda, H.

Summary form only given. High temperature and reliable operation of 635 nm tensile strained InGaP multiquantum-well laser diodes has been achieved. An output power level of 10 mW was sustainable up to 80°C and stable operation of over 1000 hours, for an output of 5 mW, at 50°C, was observed

Published in:

Semiconductor Laser Conference, 1994., 14th IEEE International

Date of Conference:

19-23 Sep 1994

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