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Terahertz imaging with bow-tie InGaAs-based diode with broken symmetry

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6 Author(s)
Kasalynas, I. ; Semicond. Phys. Inst., Vilnius, Lithuania ; Seliuta, D. ; Simniskis, R. ; Tamosiunas, V.
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A silicon-lens coupled bow-tie InGaAs-based diode with broken symmetry is demonstrated for terahertz imaging applications below 1 THz at room temperature. Transient features and the dynamic range of the bow-tie InGaAs-based sensor are explored experimentally, proving the possibility to use the device in real-time imaging systems. Response time is found to be less than 7 ns, responsivity of 0.1 mA/W, and noise equivalent power of 5.8 nW/radicHz.

Published in:

Electronics Letters  (Volume:45 ,  Issue: 16 )