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Terahertz imaging with bow-tie InGaAs-based diode with broken symmetry

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6 Author(s)
I. Kasalynas ; Semiconductor Physics Institute ; D. Seliuta ; R. Simniskis ; V. Tamosiunas
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A silicon-lens coupled bow-tie InGaAs-based diode with broken symmetry is demonstrated for terahertz imaging applications below 1 THz at room temperature. Transient features and the dynamic range of the bow-tie InGaAs-based sensor are explored experimentally, proving the possibility to use the device in real-time imaging systems. Response time is found to be less than 7 ns, responsivity of 0.1 mA/W, and noise equivalent power of 5.8 nW/radicHz.

Published in:

Electronics Letters  (Volume:45 ,  Issue: 16 )