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InP DHBT Process in Transferred-Substrate Technology With f_{t} and f_{\max } Over 400 GHz

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5 Author(s)
Kraemer, T. ; Ferdinand-Braun-Inst. fur Hochstfrequenztechnik (FBH), Berlin, Germany ; Rudolph, M. ; Schmueckle, F.J. ; Wuerfl, J.
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In this paper, a double heterojunction bipolar transistor (DHBT) process has been developed in transferred-substrate (TS) technology to optimize high-frequency performance. It provides an aligned lithographic access to frontside and backside of the device to eliminate dominant transistor parasitics. The transistors of 0.8 times 5-mum2 emitter mesa feature ft = 410 GHz and fmax = 480 GHz at a BVceo = 5.5 V. Parallel to the device setup, a multilevel metallization scheme is established. It serves as construction kit for 3-D configurations of active and passive elements. High yield of the TS DHBTs, consistent large-signal modeling, and accurate simulation of complex passive elements have been demonstrated and have proved the availability of the technology for advanced millimeter-wave circuit design.

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Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 9 )