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Application of Exponential Tail-State Distribution Model to the Above-Threshold Characteristics of Zn-Based Oxide Thin-Film Transistors

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5 Author(s)
Takechi, K. ; NEC LCD Technol., Ltd., Kawasaki, Japan ; Nakata, M. ; Eguchi, T. ; Yamaguchi, H.
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Our experimental results for amorphous InGaZnO4 and polycrystalline ZnO TFTs show a gate-voltage-dependent transconductance that is somewhat different from that for crystalline MOSFETs. We show that a model of the exponential distribution of band tail states can be used to describe the above-threshold behavior of Zn-based oxide TFTs.

Published in:

Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 9 )

Date of Publication:

Sept. 2009

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