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Application of Exponential Tail-State Distribution Model to the Above-Threshold Characteristics of Zn-Based Oxide Thin-Film Transistors

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5 Author(s)

Our experimental results for amorphous InGaZnO4 and polycrystalline ZnO TFTs show a gate-voltage-dependent transconductance that is somewhat different from that for crystalline MOSFETs. We show that a model of the exponential distribution of band tail states can be used to describe the above-threshold behavior of Zn-based oxide TFTs.

Published in:

IEEE Transactions on Electron Devices  (Volume:56 ,  Issue: 9 )