Application of Exponential Tail-State Distribution Model to the Above-Threshold Characteristics of Zn-Based Oxide Thin-Film Transistors

Our experimental results for amorphous InGaZnO
₄
and polycrystalline ZnO TFTs show a gate-voltage-dependent transconductance that is somewhat different from that for crystalline MOSFETs. We show that a model of the exponential distribution of band tail states can be used to describe the above-threshold behavior of Zn-based oxide TFTs.