Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

MILC-TFT With High- \kappa Dielectrics for One-Time-Programmable Memory Application

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Tsung-Yu Chiang ; Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Ming-Wen Ma ; Wu, Yi‐hong ; Po-Yi Kuo
more authors

In this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-channel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-kappa dielectrics is demonstrated. The state of this OTP memory can be identified by the scheme of gate-induced drain leakage current measurement. The OTP-TFT memory has good electrical characteristics in terms of low threshold voltage Vth ~ -0.78 V, excellent subthreshold swing ~ 105 mV/dec, low operation voltage, faster programming speeds, and excellent reliability characteristics.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 9 )