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MILC-TFT With High- \kappa Dielectrics for One-Time-Programmable Memory Application

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8 Author(s)
Tsung-Yu Chiang ; Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Ming-Wen Ma ; Wu, Yi‐hong ; Po-Yi Kuo
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In this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-channel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-kappa dielectrics is demonstrated. The state of this OTP memory can be identified by the scheme of gate-induced drain leakage current measurement. The OTP-TFT memory has good electrical characteristics in terms of low threshold voltage Vth ~ -0.78 V, excellent subthreshold swing ~ 105 mV/dec, low operation voltage, faster programming speeds, and excellent reliability characteristics.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 9 )