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High-Gain SiC MESFETs Using Source-Connected Field Plates

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6 Author(s)

We demonstrate for the first time improvement of radio-frequency (RF) gain of SiC MESFETs by using source-connected field plates (FPs). MESFETs fabricated with this approach show a new record maximum stable gain exceeding 15.7 dB at 3.1 GHz. This is 2.7 dB higher than the baseline devices without FP. RF power output greater than 4 W/mm was also achieved showing the potential of these devices for high-power operation.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 9 )