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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:30 Issue:9 Help

Germanium In Situ Doped Epitaxial Growth on Si for High-Performance \hbox {n}^{+}/\hbox {p} -Junction Diode

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5 Author(s)
Yu, Hyun-Yong ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA ; Cheng, Szu-Lin ; Griffin, Peter B. ; Nishi, Yoshio
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We demonstrate an abrupt and box-shaped n+/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using in situ doping during epitaxial growth. The temperature dependence of dopant activation was investigated associated with the shallower and abrupt junction formation. In addition, we have fabricated high-performance Ge n+/p-junction diodes at 400degC-600degC, based on the in situ doping technique. Excellent diode characteristics having a 1.1 times 104 on/off ratio and a high forward current density (120 A/cm2 at 1 V) are obtained in an n+/p diode at 600-C in situ doping.

Published in:
Electron Device Letters, IEEE  (Volume:30 ,  Issue: 9 )

Date of Publication: Sept. 2009

Page(s):
1002 - 1004
ISSN :
0741-3106
INSPEC Accession Number:
10841639
Digital Object Identifier :
10.1109/LED.2009.2027823
Product Type:
Journals & Magazines
Date of Publication :
04 August 2009
Date of Current Version :
25 August 2009
Issue Date :
Sept. 2009
Sponsored by :
IEEE Electron Devices Society

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