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On Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Biaxially Tensile-Strained Si MOSFETs

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3 Author(s)
Zhao, Yi ; Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan ; Takenaka, M. ; Takagi, S.

In this letter, we examine the impact of biaxial tensile strain on the surface roughness scattering-limited mobility (??sr) of electrons and holes, experimentally. It is found that tensile strain monotonically enhances electron ??sr with the increase in the amount of strain but does not enhance hole ??sr even when the strain is quite high (in the Si1- xGex relaxed layers with 40% Ge content). This different strain dependence of electron and hole ??sr can be explained by a combination of a slight reduction in the roughness height (??) of the Si/SiO2 interfaces and a decrease in the correlation length (??), induced by tensile strain. The strain-induced ?? reduction is confirmed by direct transmission electron microscopy measurements for the first time.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 9 )