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Composition dependence of photoluminescence of GaAs1-xBix alloys

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5 Author(s)
Xianfeng Lu ; Department of Physics and Astronomy, Advanced Materials and Process Engineering Laboratory, University of British Columbia, Vancouver, BC V6T 1Z4, Canada ; Beaton, D.A. ; Lewis, R.B. ; Tiedje, T.
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Room temperature photoluminescence (PL) spectra have been measured for GaAs1-xBix alloys with Bi concentrations in the 0.2%–10.6% range. The decrease in the PL peak energy with increasing Bi concentration follows the reduction in bandgap computed from density functional theory. The PL peak energy is found to increase with PL pump intensity, which we attribute to the presence of shallow localized states associated with Bi clusters near the top of the valence band. The PL intensity is found to increase with Bi concentration at low Bi concentrations, peaking at 4.5% Bi.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 4 )

Date of Publication:

Jul 2009

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