By Topic

Optical line width in semiconductor quantum dots

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Král, K. ; Inst. of Phys., Acad. of Sci. of Czech Republic, v.v.i., Prague, Czech Republic ; Mensik, M.

The line-width of the optical transitions in quantum dots is studied theoretically on the basis of the electron coupling to the longitudinal optical phonons in polar semiconductors. With using the self-consistent Born approximation to the electronic self-energy, we are able to reproduce one of the main experimental results obtained on CdSe and CuBr quantum dots, namely the linear dependence of the width of the optical line on the inverse of the quantum dot diameter. In addition to it, the theory allows to expect certain resonance features on the linear dependence of line width. We remind that perhaps extensions of the present line-width theory might be suitable for to describe adequately the behavior of the line width in CdSe and InAs quantum dots.

Published in:

Transparent Optical Networks, 2009. ICTON '09. 11th International Conference on

Date of Conference:

June 28 2009-July 2 2009