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A New Technique to Extract the Source/Drain Series Resistance of MOSFETs

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5 Author(s)
Fleury, D. ; STMicroelectronics, Crolles, France ; Cros, A. ; Bidal, G. ; Rosa, J.
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This letter demonstrates a new technique to extract the source/drain series resistance of MOSFETs. Unlike the well-known total resistance techniques, Rsd is extracted in a way that the result is insensitive to effective length and mobility variations. The technique has been successfully applied to 45-nm bulk and fully depleted SOI MOSFETs with high-κ and metal gate, having channel length down to 22 nm. The technique provides a high accuracy and allows fast measurements and statistical analysis.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 9 )