Referenced Items are not available for this document.
This letter demonstrates a new technique to extract the source/drain series resistance of MOSFETs. Unlike the well-known total resistance techniques, Rsd is extracted in a way that the result is insensitive to effective length and mobility variations. The technique has been successfully applied to 45-nm bulk and fully depleted SOI MOSFETs with high-κ and metal gate, having channel length down to 22 nm. The technique provides a high accuracy and allows fast measurements and statistical analysis.
Published in:
Electron Device Letters, IEEE
(Volume:30
,
Issue:
9
)
Date of Publication: Sept. 2009
- Page(s):
- 975 - 977
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10841640
- Digital Object Identifier :
- 10.1109/LED.2009.2026592
- Date of Publication :
- 31 July 2009
- Date of Current Version :
- 25 August 2009
- Issue Date :
- Sept. 2009
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
