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Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an \hbox {Al}_{2}\hbox {O}_{3}/\hbox {SiN}_{x} Dielectric Layer

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8 Author(s)
Donghyun Kim ; Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA ; Kumar, V. ; Jaesun Lee ; Minjun Yan
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In this letter, a novel process for recessed-gate AlGaN/GaN high-electron-mobility transistors using an Al2O3/SiNx dielectric has been developed. The Al2O3/SiNx dielectric bilayer was used as a recess etch-mask for short-gate-footprint definition. Recessed-gate devices with a gate length of 70 nm have been fabricated on a molecular-beam-epitaxy-grown layer structure using this process. After the removal of the dielectric layers, excellent dc and small-signal results, a high drain-current density of 1.5 A/mm, a unity gain cutoff frequency of 160 GHz, and a maximum frequency of oscillation of 200 GHz were obtained.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 9 )