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Integrated Hydrogen-Sensing Amplifier With GaAs Schottky-Type Diode and InGaPGaAs Heterojunction Bipolar Transistor

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7 Author(s)
Shao-Yen Chiu ; Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Keelung, Taiwan ; Jung-Hui Tsai ; Hsuan-Wei Huang ; Kun-Chieh Liang
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New hydrogen-sensing amplifiers are fabricated by integrating a GaAs Schottky-type hydrogen sensor and an InGaP-GaAs heterojunction bipolar transistor. Sensing collector currents (ICN and ICH) reflecting to N2 and hydrogen-containing gases are employed as output signals in common-emitter characteristics. Gummel-plot sensing characteristics with testing gases as inputs show a high sensing-collector-current gain (ICH/ICN) of > 3000. When operating in standby mode for in situ long-term detection, power consumption is smaller than 0.4 ??W. Furthermore, the room-temperature response time is 85 s for the integrated hydrogen-sensing amplifier fabricated with a bipolar-type structure.

Published in:

IEEE Electron Device Letters  (Volume:30 ,  Issue: 9 )