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High-Power Single-Mode 1.3- \mu m InGaAsP–InGaAsP Multiple-Quantum-Well Laser Diodes With Wide Apertures

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9 Author(s)

A wide-aperture ridge waveguide structure was applied to 1.3-mum InGaAsP-InGaAsP multiple-quantum-well laser diodes (LDs) to increase their maximum kink-free output power under single-lateral-mode operations. As a result, a kink-free output power up to 140 mW and an external efficiency of 0.3 W/A were achieved from a single facet of the LD with a 7-mum-wide ridge top and a 1.5-mm-long uncoated cavity.

Published in:

Photonics Technology Letters, IEEE  (Volume:21 ,  Issue: 19 )