Referenced Items are not available for this document.
Record microwave frequency performance was achieved with nanocrystalline ZnO thin-film transistors fabricated on Si substrates. Devices with 1.2-mum gate lengths and Au-based gate metals had current and power gain cutoff frequencies of fT = 2.45 GHz and fmax = 7.45 GHz, respectively. Same devices had drain-current on/off ratios of 5 times1010 exhibited no hysteresis effects and could be operated at a current density of 348 mA/mm. The microwave performances of devices with 1.2- and 2.1- mum gate lengths and 50- and 100-mum gate widths were compared.
Published in:
Electron Device Letters, IEEE
(Volume:30
,
Issue:
9
)
Date of Publication: Sept. 2009
- Page(s):
- 946 - 948
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10846889
- Digital Object Identifier :
- 10.1109/LED.2009.2025672
- Product Type:
- Journals & Magazines
- Date of Publication :
- 28 July 2009
- Date of Current Version :
- 25 August 2009
- Issue Date :
- Sept. 2009
- Sponsored by :
- IEEE Electron Devices Society
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