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Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach

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4 Author(s)
De Michielis, M. ; Dept. of Electr., Mech. & Manage. Eng., Univ. of Udine, Udine, Italy ; Esseni, D. ; Palestri, P. ; Selmi, L.

This paper presents a new self-consistent multi-subband Monte Carlo (MSMC) simulator designed to investigate quasi-ballistic transport in nanoscale pMOSFETs. The simulator is 2-D in real space and k-space, and an accurate analytical model of the warped hole energy dispersion is adopted. The effects of the hole gas degeneracy are naturally included by accounting for the Pauli's exclusion principle. The simulator is implemented by resorting to original solutions for handling the hole-free flights consistently with the complicated energy dispersion. A detail description of the formulation of the scattering rates used in the simulator and a comparison to calculations based on a k middot p quantization model are given. Upon an appropriate calibration, the new MSMC tool can accurately reproduce the experimental data for low field mobility, and it can be used for the analysis of the semiballistic transport regime in nanoscale pMOSFETs. Preliminary results for the ballistic ratios BR in double-gate silicon-on-insulator pMOSFETs show that the BR in pMOS are not much worse than in nMOS transistors.

Published in:

Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 9 )

Date of Publication:

Sept. 2009

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