By Topic

A Large-Area High-Reflectivity Broadband Monolithic Single-Crystal-Silicon Photonic Crystal Mirror MEMS Scanner With Low Dependence on Incident Angle and Polarization

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Il Woong Jung ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA ; Shrestha Basu Mallick ; Olav Solgaard

In this paper, we introduce a single-axis resonant combdrive microelectromechanical systems (MEMS) scanner with a large-area highly reflective broadband monolithic single-crystal-silicon (SCS) photonic crystal (PC) mirror. PC mirrors can be made from a single monolithic piece of silicon through alternate steps of etching and oxidation. This process allows the fabrication of a stress-free PC reflector in SCS with better optical flatness than deposited films such as polysilicon slabs on low-index oxide. PC mirrors can be made in IR transparent dielectric material and can achieve high reflectivity over a broad wavelength range. PC reflectors have several advantages over other mirror technologies. They can tolerate much higher processing temperatures and higher incident optical powers as well as operate in more corrosive environments than metals. Compared to multilayer dielectric stacks, PC mirrors allow for simpler process integration, thus making them highly compatible with CMOS and MEMS processing. In this paper, we fabricate a PC mirror MEMS scanner in SCS without any deposited films. Our PC mirrors show broadband high reflectivity in the wavelength range from 1550 to 1600 nm, and very low angular and polarization dependence over this same range. The single-axis MEMS scanners are fabricated on silicon-on-insulator (SOI) wafers with the PC mirrors also fabricated in the SOI device layer. The scanners are actuated by electrostatic comb drives on resonance. Dynamic deflection measurements show that the scanners achieve 22deg total scan angle with an input square wave of 67 V and have a resonance frequency of 2.13 kHz.

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:15 ,  Issue: 5 )