By Topic

Twin Nonlinear Two-Box Models for Power Amplifiers and Transmitters Exhibiting Memory Effects With Application to Digital Predistortion

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hammi, O. ; Electr. & Comput. Eng. Dept., Univ. of Calgary, Calgary, AB, Canada ; Ghannouchi, F.M.

In this paper, a new class of models, named twin nonlinear two-box (TNTB) models, is proposed for modeling and digital predistortion of power amplifiers and transmitters exhibiting memory effects. The forward, reverse, and parallel TNTB models are introduced. These models enable a more general modeling of nonlinear distortions and memory effects in comparison with previously reported behavioural models. The models' performance is assessed experimentally for a high power Doherty amplifier driven by multi-carrier WCDMA signals. The modeling and predistortion results demonstrate the effectiveness of the proposed models when compared to the well established memory polynomials. Indeed, the proposed models lead to the same performance as memory polynomial models while reducing the number of parameters by approximately 50%. Definitely, only 24 parameters were required to accurately model and linearize a highly nonlinear Doherty power amplifier driven by a 20 MHz wide multi-carrier signal. To the best of the authors' knowledge, this is the lowest complexity model/digital predistorter reported for similar context.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:19 ,  Issue: 8 )