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The structural properties of InN/GaN heterostructure nanowires (NWs) were studied using transmission electron microscope techniques to determine strain behavior. A great quantity of the misfit strain between InN and GaN was relaxed through the introduction of misfit dislocations along the interface. Geometric phase analysis revealed a strain-concentration phenomenon in the strain map of the out-of-plane components and a gradual lattice recovery in that of the in-plane components over the InN/GaN interface. Interface structures that were modulated at the atomic-scale were observed in several InN/GaN heterostructure NWs. Complex strain distributions were identified in both InN and GaN.
Published in:
Applied Physics Letters
(Volume:95
,
Issue:
3
)
Date of Publication: Jul 2009
- Page(s):
- 033112 - 033112-3
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.3184541
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 28 July 2009
- Issue Date :
- Jul 2009
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