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Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits

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3 Author(s)
Weyher, J.L. ; Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw, Poland ; Ashraf, H. ; Hageman, P.R.

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GaN templates grown by the metal organic chemical vapor deposition method were etched in a defect-selective molten salts eutectic and were subsequently overgrown by a GaN layer using the hydride vapor phase epitaxy (HVPE) method. Optimized conditions of etching and of HVPE growth processes resulted in a significant reduction of the dislocations density (DD). Local areas virtually free of dislocations were obtained on ∼50% of the surface, while the average DD was reduced from 3×109 cm-2 in the template to about 2×107 cm-2 in the HVPE-grown GaN layer. A model has been developed to explain the mechanism of reduction of the DD during the overgrowth process. The model was confirmed by the photoetching of cleaved layers.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 3 )