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2.7- \mu m GaSb-Based Diode Lasers With Quinary Waveguide

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7 Author(s)
Chen, J. ; State Univ. of New York at Stony Brook, Stony Brook, NY, USA ; Kipshidze, G. ; Shterengas, L. ; Hosoda, T.
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Type-I double-quantum-well (QW) GaSb-based diode lasers operating at 2.7 mum with room-temperature continuous-wave (CW) output power of 600 mW and peak power-conversion efficiency of 10% were designed and fabricated. The devices employed 470-nm-wide AlGaInAsSb waveguide optimized for improved device differential gain. CW threshold current density about 100 A/cm2 per QW and slope efficiency of 150 mW/A were demonstrated at 16degC.

Published in:

Photonics Technology Letters, IEEE  (Volume:21 ,  Issue: 16 )