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Characteristics of InAs/GaNAs strain-compensated quantum dot solar cell

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3 Author(s)
Okada, Yoshitaka ; Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan ; Oshima, R. ; Takata, A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3176903 

We have fabricated and compared the performance of GaAs-based p-i-n quantum dot solar cells with ten multilayer stacked structures of self-assembled InAs quantum dots embedded with GaNxAs1-x strain-compensating spacer layers. Reducing the thickness of the spacer layer, and hence increasing the nitrogen composition in GaNxAs1-x, from 40 nm (x=0.5%) to 15 nm (x=1.5%) thereby fulfilling the net strain-balanced condition, resulted in a steady increase in the short-circuit density, while a decreasing trend for the open-circuit voltage was observed. The observed results can be interpreted in terms of the difference in the quantum confinement structure.

Published in:

Journal of Applied Physics  (Volume:106 ,  Issue: 2 )

Date of Publication:

Jul 2009

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