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Sn12Sb88 material for phase change memory

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7 Author(s)
Rao, Feng ; State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China ; Song, Zhitang ; Ren, Kun ; Li, Xuelai
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Phase change memory cell based on Sn12Sb88 film shows reversible phase change abilities between high and low resistance states. We calculate the resonance character of crystalline SnSb material, which proves that SnSb is a potential phase change candidate. Sn12Sb88 is the suitable composition that has faster crystallization speed, higher crystallization temperature, and larger crystallization activation energy but lower melting point than those of Ge2Sb2Te5 material. Hence, phase change memory cell using this composition is able to show quicker set operation speed, better data retention ability, and lower reset power consumption than those of the Ge2Sb2Te5 based cell.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 3 )

Date of Publication:

Jul 2009

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