IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:56 Issue:9 Help

Second-Bit-Effect-Free Multibit-Cell Flash Memory Using \hbox {Si}_{3} \hbox {N}_{4}/\hbox {ZrO}_{2} Split Charge Trapping Layer

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Gang Zhang ; SKKU Adv. Inst. of Nanotechnol., Sungkyunkwan Univ., Suwon, South Korea ; Seung-Hwan Lee ; Chang Ho Ra ; Hua-Min Li
more authors

In this paper, a Si3N4/ZrO2 split charge trapping layer (SCTL) is proposed for multibit-cell Flash memory. The complementary potential wells of Si3N4/ZrO2 storage nodes enable independent node control when the Fowler-Nordheim (F-N) method is applied for programming/erasing (P/E). Experiment and simulation results suggest that the 2-bit (2-b) charge storage is accomplished by physical data node separation for the SCTL rather than charge injection control. The well-confined charge storages suppress the second-bit effect, enabling excellent 2-b data clearance for short-channel SCTL devices. It was found that the remaining memory windows after 105 s decrease, dependent on the difference of the trap properties between Si3N4 and ZrO2.

Published in:
Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 9 )

Date of Publication: Sept. 2009

Page(s):
1966 - 1973
ISSN :
0018-9383
INSPEC Accession Number:
10828872
Digital Object Identifier :
10.1109/TED.2009.2026090
Date of Publication :
24 July 2009
Date of Current Version :
18 August 2009
Issue Date :
Sept. 2009
Sponsored by :
IEEE Electron Devices Society

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.