Cart (Loading....) | Create Account
Close category search window
 

Negative bias temperature instability of p-channel transistors with diamond-like carbon liner having ultra-high compressive stress

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Liu, Bin ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Kian-Ming Tan ; Ming-Chu Yang ; Yee-Chia Yeo

The negative bias temperature instability (NBTI) characteristics of p-channel field-effect transistors with diamond-like carbon (DLC) liner stressor having ultra-high compressive stress (>5 GPa) are investigated for the first time. Ultra-Fast Measurement (UFM) was employed for NBTI study. Power law slopes ranging from ~0.057 to ~0.070 are reported in this work. P-FETs with higher channel strain show greater threshold voltage shift (DeltaVth) than those with lower or no channel strain under the same gate voltage VGS stress condition. DeltaVth recovery-behavior of highly strained devices suggests that both charge trapping and interface trap degradation are enhanced by strain. Despite this, strained p-FETs with recessed SiGe S/D and DLC stressors are projected to have a NBTI lifetime exceeding 10 years at VG = -1 V, showing no severe reliability issues.

Published in:

Reliability Physics Symposium, 2009 IEEE International

Date of Conference:

26-30 April 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.