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Negative bias temperature instability of p-channel transistors with diamond-like carbon liner having ultra-high compressive stress

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4 Author(s)
Bin Liu ; Department of Electrical & Computer Engineering, National University of Singapore, 117576. Data Storage Institute, Singapore 117608 ; Kian-Ming Tan ; Ming-Chu Yang ; Yee-Chia Yeo

The negative bias temperature instability (NBTI) characteristics of p-channel field-effect transistors with diamond-like carbon (DLC) liner stressor having ultra-high compressive stress (>5 GPa) are investigated for the first time. Ultra-Fast Measurement (UFM) was employed for NBTI study. Power law slopes ranging from ~0.057 to ~0.070 are reported in this work. P-FETs with higher channel strain show greater threshold voltage shift (DeltaVth) than those with lower or no channel strain under the same gate voltage VGS stress condition. DeltaVth recovery-behavior of highly strained devices suggests that both charge trapping and interface trap degradation are enhanced by strain. Despite this, strained p-FETs with recessed SiGe S/D and DLC stressors are projected to have a NBTI lifetime exceeding 10 years at VG = -1 V, showing no severe reliability issues.

Published in:

2009 IEEE International Reliability Physics Symposium

Date of Conference:

26-30 April 2009