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Post-cycling data retention failure in multilevel nor flash memory with nitrided tunnel-oxide

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8 Author(s)
Lee, W.H. ; Memory Div., Samsung Electron., Yongin, South Korea ; Chang-Hyun Hur ; Hyun-Min Lee ; Hwanbae Yoo
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Post-cycling data retention characteristics of a multilevel NOR flash memory with nitrided tunnel-oxide is presented. Results show that retention behavior is strongly related to the amount of interface trap generation rather than that of oxide trap, indicating detrapping from near interface trap is a major factor for threshold voltage shift. Process conditions including nitrogen concentration at the interface and subsequent annealing of nitrided tunnel-oxide by O2 are found to be related to the generation of interface trap and resultant postcycling retention.

Published in:

Reliability Physics Symposium, 2009 IEEE International

Date of Conference:

26-30 April 2009

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