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Avalanche, joule breakdown and hysteresis in carbon nanotube transistors

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4 Author(s)
Pop, E. ; Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA ; Dutta, S. ; Estrada, D. ; Liao, Albert

We explore several aspects of reliability in carbon nanotube transistors, including their physical dependence on diameter. Avalanche behavior is found at high fields (5-10 V/mum), while Joule breakdown is reached at high current and heating, in the presence of oxygen. Finally, we describe a method for minimizing hysteresis effects via pulsed measurements.

Published in:

Reliability Physics Symposium, 2009 IEEE International

Date of Conference:

26-30 April 2009

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