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We investigated in detail the relationship between the 1/f noise, carrier mobility and interface state defects between the Si substrate and oxide on (110) and (100) substrates. In the case of pMOSFETs, the 1/f noise is independent of the mobility degradation due to the increase of effective hole mass in Si channel. However, the 1/f noise is strongly related to the degradation in the hole mobility due to the process integration damage. With hole mobilities becoming lower, 1/f noise intensity was enhanced. On the other hand, the 1/f noise of nMOSFETs is rerated to interface defects rather than electron mobility degradation. Additionally its behavior was affected by the difference between Pb0 and Pb1.