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We investigated in detail the relationship between the 1/f noise, carrier mobility and interface state defects between the Si substrate and oxide on (110) and (100) substrates. In the case of pMOSFETs, the 1/f noise is independent of the mobility degradation due to the increase of effective hole mass in Si channel. However, the 1/f noise is strongly related to the degradation in the hole mobility due to the process integration damage. With hole mobilities becoming lower, 1/f noise intensity was enhanced. On the other hand, the 1/f noise of nMOSFETs is rerated to interface defects rather than electron mobility degradation. Additionally its behavior was affected by the difference between Pb0 and Pb1.
Reliability Physics Symposium, 2009 IEEE International
Date of Conference: 26-30 April 2009