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High thermally induced index variations with short response time in InP/GalnAsP/InP waveguide Schottky diodes

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6 Author(s)
Saadsaoud, N. ; Inst. d'Electron., de Microelectron. et de Nanotechnol., Univ. des Sci. et Technol. de Lille, Villeneuve d'Ascq, France ; Zegaoui, M. ; Decoster, D. ; Dogheche, E.
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Thermally induced index variations as high as 0.1 were recorded in InP/GaAsInP1.15/InP waveguide Schottky diodes for 1 W/mm electrical power per electrode length. Pulse response characterisation showed almost 700 ns response time for 1 ??s square pulses under forward biased conditions (I = 20 mA, V = 300 mV).

Published in:

Electronics Letters  (Volume:45 ,  Issue: 15 )