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Ku-band high-power amplifier MMIC with on-chip gate biasing circuit

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3 Author(s)
Y. S. Noh ; (Global Area Wireless Technology Research Department, Electronics and Telecommunications Research Institute, 138 Gajeong-no, Yuseong-gu, Daejeon, Korea) E-mail: ; D. P. Chang ; I. B. Yom

A new active bias scheme for GaAs HEMT high-power amplifier (HPA) MMICs is proposed that compensates variation of gate threshold voltage and temperature. The quiescent currents of the amplifier were estimated within ??0.7?? when the threshold voltage varied from ??0.3 to 0.3??V. Also, the measured quiescent currents were increased with temperature, providing compensation of temperature variations. A Ku-band HPA, using 0.5????m GaAs pHEMT processes, was fabricated to demonstrate the suggested bias topology.

Published in:

Electronics Letters  (Volume:45 ,  Issue: 15 )