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Browse Journals & Magazines > Applied Physics Letters ...> Volume:95 Issue:3 Help

Study of electrical characterization of 2-methyl-9, 10-di(2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer

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6 Author(s)
Hsieh, Ming-Ta ; Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan ; Ho, Meng-Huan ; Lin, Kuan-Heng ; Chen, Jenn-Fang
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An efficient p-doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO3) has been developed. The admittance spectroscopy studies show that the incorporation of WO3 into MADN can greatly improve the hole injection and the conductivity of the device. Moreover, when this p-doped layer was incorporated in the tris(8-quinolinolato)aluminum-based device, it achieved a current efficiency of 4.0 cd/A and a power efficiency of 2.4 lm/W at 20 mA/cm2. This work paves the way to simplify the fabrication of future p-i-n organic light-emitting devices with a single common ambipolar MADN material.

Published in:
Applied Physics Letters  (Volume:95 ,  Issue: 3 )

Date of Publication: Jul 2009

Page(s):
033501 - 033501-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3173824
Product Type:
Journals & Magazines
Date of Current Version :
24 July 2009
Issue Date :
Jul 2009

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